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首頁 >HV2203FG>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HV2203FG-G	文件：841.58 Kbytes Page：9 Pages	Low Charge Injection, 8-Channel High Voltage Analog Switch GeneralDescription TheSupertexHV2203isalowchargeinjection8-channelhighvoltageanalogswitchintegratedcircuit(IC)intendedforuseinapplicationsrequiringhighvoltageswitchingcontrolledbylowvoltagesignals,suchasmedicalultrasoundimaging,piezoelectrictransducerdriver	SUTEX Supertex, Inc	SUTEX
HV2203PJ-G	文件：841.58 Kbytes Page：9 Pages	LowChargeInjection,8-ChannelHighVoltageAnalogSwitch GeneralDescription TheSupertexHV2203isalowchargeinjection8-channelhighvoltageanalogswitchintegratedcircuit(IC)intendedforuseinapplicationsrequiringhighvoltageswitchingcontrolledbylowvoltagesignals,suchasmedicalultrasoundimaging,piezoelectrictransducerdriver	SUTEX Supertex, Inc	SUTEX
IIRL2203N	文件：338.89 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRL2203	文件：221.17 Kbytes Page：8 Pages	PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203N	文件：221.17 Kbytes Page：8 Pages	PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203N	文件：338.89 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRL2203NL	文件：132.36 Kbytes Page：10 Pages	PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NLPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NLPBF	文件：295.79 Kbytes Page：10 Pages	AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NPBF	文件：183.07 Kbytes Page：8 Pages	HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NPBF	文件：192.01 Kbytes Page：9 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRL2203NS	文件：132.36 Kbytes Page：10 Pages	PowerMOSFET(Vdss=30V,Rds(on)=7.0mohm,Id=116A?? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NS	文件：263.11 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRL2203NSPBF	文件：231.35 Kbytes Page：11 Pages	HEXFET?PowerMOSFET Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203NSPBF	文件：295.79 Kbytes Page：10 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRL2203NSTRLPBF	文件：295.79 Kbytes Page：10 Pages	AdvancedProcessTechnology Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRL2203S	文件：173.01 Kbytes Page：9 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.007ohm,Id=100A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi	IRF International Rectifier	IRF
IRLI2203	文件：328.14 Kbytes Page：8 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRLI2203G	文件：328.14 Kbytes Page：8 Pages	PowerMOSFET(Vdss=30V,Rds(on)=0.010ohm,Id=52A?? Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號：
HV2203FG
功能描述：
多路器開關(guān) IC LO CHRG INJECTN 8Ch HIVLTG ANALOG SWITCH
RoHS：
否
制造商：
Texas Instruments
通道數(shù)量：
1
開關(guān)數(shù)量：
4
開啟電阻（最大值）：
7 Ohms
傳播延遲時間：
0.25 ns
工作電源電壓：
2.3 V to 3.6 V
最大工作溫度：
+ 85 C
安裝風(fēng)格：
SMD/SMT
封裝/箱體：
UQFN-16

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市昊創(chuàng)電子有限公司	HV2203FG-G	MICROCHIP微芯	1624+	TQFP48	500	代理品牌	詢價
深圳市創(chuàng)新跡電子有限公司	HV2203PJ	MICROCHIP	23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳市安富世紀(jì)電子有限公司	HV2203PJ	MICROCHIP	23+		7300	專注配單,只做原裝進(jìn)口現(xiàn)貨	詢價
深圳龐田科技有限公司	HV2203PJ-G	Supertex	2023+環(huán)?，F(xiàn)貨	PLCC-28	2580	專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù)	詢價
深圳市明嘉萊科技有限公司	HV2203PJ-G	SUPERTEX	08+	PLCC	880000	明嘉萊只做原裝正品現(xiàn)貨	詢價
深圳市凌旭科技有限公司	HV220GA	SUPERTEX	2016+	BGA	6000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價
深圳市亞泰盈科電子有限公司	HV220GA	SUPERTEX		BGA	10265	提供BOM表配單只做原裝貨值得信賴	詢價
深圳市華斯頓科技有限公司	HV220GA	SUPERTEX	22+23+	BGA	38603	絕對原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價
深圳市芯祺盛科技有限公司	HV220GA	SUPERTEX	10+PB	BGA	1308	向鴻原裝正品/代理渠道/現(xiàn)貨優(yōu)勢	詢價
瀚佳科技(深圳)有限公司	HV220GA	SUPERTEX	24+	BGA	35200	一級代理分銷/放心采購	詢價

更多HV2203FG供應(yīng)商更新時間2025-1-5 13:52:00

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