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HV51V7403HGL-6中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HV51V7403HGL-6
廠商型號(hào)

HV51V7403HGL-6

功能描述

4M x 4Bit EDO DRAM

文件大小

96.41 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 Hynix Semiconductor
企業(yè)簡(jiǎn)稱(chēng)

Hynix海力士

中文名稱(chēng)

海力士半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-5 23:00:00

HV51V7403HGL-6規(guī)格書(shū)詳情

DESCRIPTION

The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit.

HY51V(S)17403HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17403HG/HGL offers Extended Data Out Page Mode as a high speed access mode. Multiplexed address inputs permit the HY51V(S)17403HG/HGL to be

packaged in standard 300mil 24(26)pin SOJ and 24(26) pin TSOP-II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.

System oriented features include single power supply 3.3V +/- 0.3V tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

FEATURES

? Fast access time and cycle time

? Extended Data Out Mode capability

? Read-modify-write capability

? Multi-bit parallel test capability

? TTL(3.3V) compatible inputs and outputs

? /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability

? JEDEC standard pinout

? 24(26)pin plastic SOJ / 24(26)pin TSOP-II

? Single power supply of 3.3V +/- 0.3V

? Battery back up operation(L-version)

產(chǎn)品屬性

  • 型號(hào):

    HV51V7403HGL-6

  • 制造商:

    HYNIX

  • 制造商全稱(chēng):

    Hynix Semiconductor

  • 功能描述:

    4M x 4Bit EDO DRAM

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SUPERTEX
23+
NA/
3427
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SUPERTEX
22+
QFP44
100000
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QFP44
68900
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CWINDUSTRIES
24+
35200
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SUPERTEX
24+
QFP44
266
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MICROCHIP/微芯
24+
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25500
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9600
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HV
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85600
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2021+
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100500
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SUPERTE
23+
PLCC
8000
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