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HVD131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVD131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?SupersmallFlatPackage(SFP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVU131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

HVU131

LowCapacitanceLowForwardresistance

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

IGCS-E131GP

Industrial4-portPCIeunmanagedGigabitEthernetswitchcard

ORING

ORing Industrial Networking Corp

IGPCS-E131GP

Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard

ORING

ORing Industrial Networking Corp

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IRF131

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF131

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF131

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF131

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFP131

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS131

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    HVC131TRF-E

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Diode PIN Switch 65V 2-Pin UFP T/R Cut Tape

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
Renesas(瑞薩)
23+
標(biāo)準(zhǔn)封裝
7102
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
RENESAS
2014+
3400
公司現(xiàn)貨庫存
 詢價(jià)
RENESAS
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
RENESAS瑞薩/HITACHI日立
24+
SOD-5230603
18200
新進(jìn)庫存/原裝
 詢價(jià)
RENESAS
19+
SOD523
20000
詢價(jià)
RENESAS/瑞薩
1942+
SOD523
9852
只做原裝正品現(xiàn)貨或訂貨!假一賠十!
 詢價(jià)
RENESAS
21+
SOD523
35200
一級代理分銷/放心采購
 詢價(jià)
RENESAS/瑞薩
23+
SOD523
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
Renesas(瑞薩)
23+
N/A
589610
新到現(xiàn)貨 原廠一手貨源 價(jià)格秒殺代理!
 詢價(jià)
RENESAS/瑞薩
22+
SOD-523
12000
原裝正品
 詢價(jià)
更多HVC131TRF-E供應(yīng)商 更新時(shí)間2024-11-18 14:59:00

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