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零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | HitachiHitachi Semiconductor 日立日立公司 | Hitachi | ||
SiliconEpitaxialPlanarPinDiodeforAntennaSwitching Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign. | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
SiliconEpitaxialPlanarPinDiode Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
LowCapacitanceLowForwardresistance Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax) | SKTECHNOLGYSHIKE Electronics 時科廣東時科微實業(yè)有限公司 | SKTECHNOLGY | ||
Industrial4-portPCIeunmanagedGigabitEthernetswitchcard | ORING ORing Industrial Networking Corp | ORING | ||
Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard | ORING ORing Industrial Networking Corp | ORING | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | BURR-BROWN Burr-Brown (TI) | BURR-BROWN | ||
PrecisionG=100INSTRUMENTATIONAMPLIFIER | TI1Texas Instruments(TI) 德州儀器德州儀器 (TI) | TI1 | ||
N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-ChannelPowerMOSFETs,20A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω | GESS GE Solid State | GESS | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
GENERALPURPOSEDIODES | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
GeneralPurposeDiodes | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
20+ |
SOT-23 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
RENESAS/瑞薩 |
23+ |
SOT-23 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費! |
詢價 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
RENESAS |
23+ |
SOT-23 |
63000 |
原裝正品現(xiàn)貨 |
詢價 | ||
HITACHI/日立 |
20+ |
SOT-23 |
43000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
RENESAS |
2023+ |
SOT-23 |
80000 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
HITACHI/日立 |
23+ |
12000 |
詢價 | ||||
HITACHI |
23+ |
SOT-23 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
HITACHI |
23+ |
SOT-23 |
6000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
RENESAS瑞薩/HITACHI日立 |
24+ |
SOT-23 |
8780 |
新進(jìn)庫存/原裝 |
詢價 |
相關(guān)規(guī)格書
更多- HVM132
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相關(guān)庫存
更多- HVM132WK
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