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HVU131

SiliconEpitaxialPlanarPinDiodeforHighFrequencySwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

HitachiHitachi Semiconductor

日立日立公司

HVU131

SiliconEpitaxialPlanarPinDiodeforAntennaSwitching

Features ?Lowcapacitance.(C=0.8pFmax) ?Lowforwardresistance.(rf=1.0?max) ?UltrasmallResinPackage(URP)issuitableforsurfacemountdesign.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HVU131

SiliconEpitaxialPlanarPinDiode

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

HVU131

LowCapacitanceLowForwardresistance

Features ●Lowcapacitance.(C=0.8pFmax) ●Lowforwardresistance.(rf=1.0Ωmax)

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

IGCS-E131GP

Industrial4-portPCIeunmanagedGigabitEthernetswitchcard

ORING

ORing Industrial Networking Corp

IGPCS-E131GP

Industrial4-portPCIeunmanagedGigabitPoEEthernetswitchcard

ORING

ORing Industrial Networking Corp

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131AP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

INA131BP

PrecisionG=100INSTRUMENTATIONAMPLIFIER

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IRF131

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF131

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF131

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFF131

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFP131

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFS131

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IS131

GENERALPURPOSEDIODES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IS131

GeneralPurposeDiodes

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
20+
SOT-23
120000
原裝正品 可含稅交易
詢價
RENESAS/瑞薩
23+
SOT-23
100586
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費!
詢價
SOT-23
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
RENESAS
23+
SOT-23
63000
原裝正品現(xiàn)貨
詢價
HITACHI/日立
20+
SOT-23
43000
原裝優(yōu)勢主營型號-可開原型號增稅票
詢價
RENESAS
2023+
SOT-23
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
HITACHI/日立
23+
12000
詢價
HITACHI
23+
SOT-23
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
HITACHI
23+
SOT-23
6000
專注配單,只做原裝進(jìn)口現(xiàn)貨
詢價
RENESAS瑞薩/HITACHI日立
24+
SOT-23
8780
新進(jìn)庫存/原裝
詢價
更多HVM131SR供應(yīng)商 更新時間2024-11-18 14:54:00