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IL130

AdmiralClass-LeadWires

ENSIGN

Ensign Corporation

IMB-130

Intel?Dual-CoreAtomTMCedarViewProcessorD2550/N2600/N2800

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etc未分類(lèi)制造商etc2未分類(lèi)制造商

IQXT-130

TCXOSpecification

IQD

IQD Frequency Products Ltd

IR130CSP

Flipky

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF130

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF130

14A,100V,0.160Ohm,N-ChannelPowerMOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF130

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF130

HighPower,HighSpeedApplications

DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF130

SEMICONDUCTORS

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IRF130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesigners

IRF

International Rectifier

IRFE130

SimpleDriveRequirements

IRF

International Rectifier

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

Intersil

Intersil Corporation

IRFF130

N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS

N-ChannelEnhancement-ModePowerField-EffectTransistors 7.0Aand8.0A,60V-100VrDS(on)=0.18Ωand0.25Ω

GESS

GE Solid State

IRFF130

N-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF130

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET

8.0A,100V,0.180Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsa

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

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Xilinx Inc.
22+
標(biāo)準(zhǔn)封裝
33
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xilinx
22+
N/A
6800
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xilinx
23+
N/A
8000
全新原裝
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HUAWEI
20+
BGA
19570
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HUAWEI
21+
BGA
5000
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HUAWEI
13+
BGA
5
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HUAWEI
23+
BGA
10000
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HUAWEI
22+
BGA
6000
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HUAWEI
22+
BGA
50000
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HUAWEI
13+
BGA
880000
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更多HW130-BULK供應(yīng)商 更新時(shí)間2025-1-8 10:08:00

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