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HX6356XVNC中文資料etc未分類制造商數(shù)據(jù)手冊(cè)PDF規(guī)格書

HX6356XVNC
廠商型號(hào)

HX6356XVNC

功能描述

32K x 8 STATIC RAM-SOI

文件大小

145.39 Kbytes

頁面數(shù)量

12

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企業(yè)簡(jiǎn)稱

ETC1etc未分類制造商

中文名稱

未分類制造商

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-14 18:25:00

HX6356XVNC規(guī)格書詳情

[Honeywell]

GENERAL DESCRIPTION

The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient

radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10 power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when

de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.

FEATURES

RADIATION

? Fabricated with RICMOS? IV Silicon on Insulator (SOI) 0.75μm Process (Leff = 0.6 μm)

? Total Dose Hardness through 1x106 rad(SiO2)

? Neutron Hardness through 1x1014 cm-2

? Dynamic and Static Transient Upset Hardness through 1x1011 rad(Si)/s

? Dose Rate Survivability through 1x1012 rad(Si)/s

? Soft Error Rate of -10 upsets/bit-day in Geosynchronous Orbit

? Latchup Free

OTHER

? Listed On SMD# 5962-95845

? Fast Read/Write Cycle Times

≤17 ns (Typical)

≤25 ns (-55 to 125°C)

? Typical Operating power < 15 mW/MHz

? Asynchronous Operation

? CMOS or TTL Compatible I/O

? Single 5 V ±10 Power Supply

? Packaging Options

- 36-Lead CFP—Bottom Braze (0.630 in. x 0.650 in.)

- 36-Lead CFP—Top Braze (0.630 in. x 0.650 in.)

產(chǎn)品屬性

  • 型號(hào):

    HX6356XVNC

  • 功能描述:

    32K x 8 STATIC RAM-SOI

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