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HX6408KVRN

512k x 8 STATIC RAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QNM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QNN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QRM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-QRN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SHN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SNM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SNN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SRM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-SRN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-VFM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-VFN

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

HX6408-VHM

512kx8STATICRAM

The512Kx8RadiationHardenedStaticRAMisahighperformance524,288wordx8-bitstaticrandomaccessmemorywithoptionalindustry-standardfunctionality.ItisfabricatedwithHoneywell’sradiationhardenedSiliconOnInsulator(SOI)technology,andisdesignedforuseinlowvoltagesystem

HoneywellHoneywell Solid State Electronics Center

霍尼韋爾霍尼韋爾國際

詳細(xì)參數(shù)

  • 型號:

    HX6408KVRN

  • 制造商:

    HONEYWELL

  • 制造商全稱:

    Honeywell Solid State Electronics Center

  • 功能描述:

    512k x 8 STATIC RAM

供應(yīng)商型號品牌批號封裝庫存備注價格
HONYWELL
15+
原廠封裝
5
宇航IC只做原裝假一罰十
詢價
HONYWELL
24+
N/A
90000
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價格合理
詢價
HONYWELL
24+
5
全新原裝
詢價
HONYWELL
18+
原廠原裝假一賠十
18
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠
詢價
HONYWELL
2022+
5
只做原裝,價格優(yōu)惠,長期供貨。
詢價
HONYWELL
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
HUAXIN(華芯)
23+
SOT23
50000
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
HUAXIN(華芯)
23+
SOT23
6000
誠信服務(wù),絕對原裝原盤
詢價
HUAXIN(華芯)
2021+
TO-92S
1414
詢價
HUAXIN(華芯)
23+
TO-92S
5185
專做感器/百分百原裝現(xiàn)貨
詢價
更多HX6408KVRN供應(yīng)商 更新時間2024-12-28 8:30:00