HX6408XERM中文資料霍尼韋爾數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

The 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell’s radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. Power consumption is typically

FEATURES

? Fabricated with RICMOS? V Silicon On Insulator (SOI)

? 0.35 mm Process (Leff = 0.28 μm)

? Total Dose ≥ 3x105 and 1X106 rad(SiO2)

? Neutron ≥1x1014 cm-2

? Dynamic and Static Transient Upset ≥1x1010 rad(Si)/s (3.3 V)

? Dose Rate Survivability ≥1x1012 rad(Si)/s

? Soft Error Rate ≤1x10-10 Upsets/bit-day (3.3 V)

? No Latchup

? Read/Write Cycle Times ≤20 ns, (3.3 V), -55 to 125°C

? Typical Operating Power (3.3 V)

<14 mW @ 1MHz Read

<30 mW @ 1MHz Write

<5 mW Standby mode

? Asynchronous Operation

? CMOS Compatible I/O

? Single Power Supply, 3.3 V ± 0.3 V

? Operating Range is -55°C to +125°C

? 36-Lead Flat Pack Package

? Optional Low Power Sleep Mode