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HY110N06T

55V / 110A N-Channel Enhancement Mode MOSFET

55V,RDS(ON)=5.5mW@VGS=10V,ID=30A Features ?LowOn-StateResistance ?ExcellentGateChargexRDS(ON)Product(FOM) ?FullyCharacterizedAvalancheVoltageandCurrent ?SpeciallyDesigenedforDC-DCConverter,Off-lineUPS,AutomotiveSystem,SolenoidandMotorControl ?I

HY

HY ELECTRONIC CORP.

110N06L

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

G110N06K

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

G110N06KA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06KAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

G110N06T

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06Tusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

G110N06TA

N-ChannelEnhancementModePowerMOSFET

Description TheG110N06TAusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導體

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

HUILIDAShenzhen hui lida electronic co., LTD

匯利達廣東匯利達半導體有限公司

HLDG110N06

N-ChannelEnhancementModePowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IPB110N06L

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB110N06LG

OptiMOS?Power-Transistor

Features ?Forfastswitchingconvertersandsync.rectification ?N-channelenhancement-logiclevel ?175°Coperatingtemperature ?Avalancherated ?Pb-freeleadplating,RoHScompliant

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數

  • 型號：

    HY110N06T

  • 制造商：

    HY

  • 制造商全稱：

    HY ELECTRONIC CORP.

  • 功能描述：

    55V/110A N-Channel Enhancement Mode MOSFET

供應商型號品牌批號封裝庫存備注價格
HAO YUEH
250
詢價
HUAYI/華羿微
24+
NA
20000
原裝正品保障
 詢價
NA
23+
27500
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
NAIS
23+
DIP
8560
受權代理!全新原裝現貨特價熱賣!
 詢價
PANASONIC
2016+
DIP
26520
全新原裝,假一罰十,公司主營繼電器!
 詢價
松下
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價
PANASONIC
22+23+
New
32053
絕對原裝正品現貨,全新深圳原裝進口現貨
 詢價
PANASONIC/松下
2018+
DIP
6200
假一罰十/本公司只做原裝正品
 詢價
MATSUSHIT
22+
DIP6
34079
原裝正品現貨,可開13個點稅
 詢價
PANASONIC/松下
24+
65200
詢價
更多HY110N06T供應商 更新時間2025-2-22 8:59:00

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