零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign,providethedesignerwithanextremelyefficientandreliabledeviceforuseinawidevarietyofapplications. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤4.0m? ?Enhancementmode ?FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyUltraLowOn-Resistance Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellkn | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMosfetTransistor Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellk | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET(Vdss=40V,Rds(on)=0.004ohm,Id=162A?? Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynamicdv/dtRating l175°COperatingTemp | IRF International Rectifier | IRF | ||
UltraLowOn-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage. lAdvancedProcessTechnology lUltraLowOn-Resistance lDynam | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
HEXFET?PowerMOSFET Description SeventhGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessing techniquestoachieveextremelylowon-resistancepersiliconarea. AdvancedProcessTechnology UltraLowOn-Resistance Dynamicdv/dtRating 175°COperatingTemperat | IRF International Rectifier | IRF |
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HAMOS/漢姆 |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
HOOYI/華羿微 |
21+ |
SOP8L |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
HAMOS/漢姆 |
24+ |
NA/ |
33250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
HY/華羿微 |
23+ |
SOP8L |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HY/華羿微 |
23+ |
SOP8L |
6500 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
HAMOS/漢姆 |
24+ |
SOP-8 |
60000 |
全新原裝現(xiàn)貨 |
詢價 | ||
HY后羿 |
23+ |
TO-263-2L |
23215 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
VLSI |
23+ |
QFP |
3500 |
絕對全新原裝!現(xiàn)貨!特價!請放心訂購! |
詢價 | ||
VLSI |
24+ |
QFP |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
VLSI |
23+ |
QFP |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 |
相關規(guī)格書
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相關庫存
更多- HY29F400BT-70
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