零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HY18N20T | 200V / 18A N-Channel Enhancement Mode MOSFET | HY HY ELECTRONIC CORP. | HY | |
200VN-ChannelEnhancementModeMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯電子上海雷卯電子科技有限公司 | LEIDITECH | ||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司 | MCC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
200VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
200VN-ChannelEnhancementModeMOSFET Features ?RDS(ON),VGS@10V,ID@9A | PANJITPan Jit International Inc. 強(qiáng)茂股份有限公司 | PANJIT | ||
N-Ch200VFastSwitchingMOSFETs | UPI uPI Semiconductor Corp | UPI | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.145? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2PAK(TO-262)POWE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半導(dǎo)體有限公司 | DOINGTER | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | Winsemi |
詳細(xì)參數(shù)
- 型號(hào):
HY18N20T
- 制造商:
HY
- 制造商全稱:
HY ELECTRONIC CORP.
- 功能描述:
200V/18A N-Channel Enhancement Mode MOSFET
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
LEM |
專業(yè)模塊 |
MODULE |
8513 |
模塊原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
LEM |
24+ |
MODULE |
2173 |
公司大量全新正品 隨時(shí)可以發(fā)貨 |
詢價(jià) | ||
LEM |
23+ |
MODULE |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
LEM |
23+ |
MODULE |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
HY |
2018 |
SMD |
131393 |
HY HY18P10P SMD 2018 |
詢價(jià) | ||
華裔 |
21+ |
TO-220FB-3L |
7540 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
INFIEON |
24+ |
BGA |
6980 |
原裝現(xiàn)貨,可開(kāi)13%稅票 |
詢價(jià) | ||
INFIEON |
23+ |
BGA |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFIEON |
20+ |
BGA |
11520 |
特價(jià)全新原裝公司現(xiàn)貨 |
詢價(jià) | ||
INFIEON |
2023+ |
BGA |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- HY18N50W
- HY19-12LF
- HY19J
- HY1-9V
- HY1A1230AC
- HY1A124DC
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- HY2717
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- HY27LF081G2M-TMB
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- HY27LF081G2M-TPCP
- HY27LF081G2M-TPEB
相關(guān)庫(kù)存
更多- HY19-12
- HY19-12LF-B
- HY19V
- HY1A112DC
- HY1A124AC
- HY1E-1.5V
- HY1E-24V
- HY1E-4.5V
- HY1E-6V
- HY1E-DC24V
- HY1EZ-4.5V
- HY1EZ-6V
- HY1N60D
- HY1Z-1.5V
- HY1Z12V
- HY1Z24J
- HY1Z-3V
- HY1Z45J
- HY2001
- HY2003
- HY2005
- HY2007
- HY204XX01
- HY20-P/SP1
- HY22-73
- HY22-73LF-B
- HY229F800BG-12I
- HY229F800BG-55I
- HY229F800BG-70I
- HY23V16202S
- HY242XX01
- HY25-P
- HY26
- HY27C64D15
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- HY27LF081G2M-TPEP