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HY1N60D

600V / 1.0A N-Channel Enhancement Mode MOSFET

HY

HY ELECTRONIC CORP.

HY1N60M

600V/1.0AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRFR1N60A

PowerMOSFET(Vdss=600V,Rds(on)max=7.0ohm,Id=1.4A)

Benefits ?LowGateChargeQgresultsinSimpleDriveRequirement ?ImprovedGate,Avalancheanddynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ?SwitchModePowerSupply(SMPS) ?UninterruptablePowerSupply ?PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60A

SMPSMOSFET

IRF

International Rectifier

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

LUCKY-LIGHT

Lucky Light Electronic

IRFR1N60A

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance: RDS(ON)=7?(MAX) ?Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSup

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR1N60A

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalancheanddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceand avalanchevoltageandcurrent ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPL

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60APBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60APBF

SMPSMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●PowerFactorCorrecti

IRF

International Rectifier

IRFR1N60APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATR

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATRLPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR1N60ATRRPBF

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU1N60A

SMPSMOSFET

IRF

International Rectifier

IRFU1N60A

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?Materialcategorization:Fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIO

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    HY1N60D

  • 制造商：

    HY

  • 制造商全稱：

    HY ELECTRONIC CORP.

  • 功能描述：

    600V/1.0A N-Channel Enhancement Mode MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
松下
1736+
RELAY
8529
專營繼電器只做原裝正品假一賠十!
 詢價
24+
N/A
52000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
PANASONIC
23+
DIP
9365
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
PANASON
2020+
DIP6
40
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
NAIS
23+
DIP6
50
原裝環(huán)保房間現(xiàn)貨假一賠十
 詢價
NAIS
1123+
DIP6
50
剛到現(xiàn)貨加微13425146986
 詢價
PANASONIC
20+
na
65790
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
PANASONIC
20+
DIP通信繼電器
2890
只做原裝現(xiàn)貨繼電器
 詢價
松下
2023+
DIP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
PANASONIC
21+
DIP6
65200
一級代理/放心采購
 詢價
更多HY1N60D供應(yīng)商 更新時間2024-12-23 10:43:00

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