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HY29LV400BT70I

4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

HynixHynix Semiconductor

SK海力士海力士半導(dǎo)體

AM29LV400BT70

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

spansionSPANSION

飛索飛索半導(dǎo)體

AM29LV400BT70REC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RECB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70REE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70REEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70REI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70REIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFCB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RFIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSCB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

AM29LV400BT70RSIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國超威半導(dǎo)體公司

供應(yīng)商型號品牌批號封裝庫存備注價格
HYNIX/海力士
23+
TSOP
3900
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價
HY
24+
TSOP48
11520
詢價
HY
23+
TSOP48
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
詢價
HY
02+
TSOP/48
11520
原裝現(xiàn)貨海量庫存歡迎咨詢
詢價
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠;
詢價
02+
2020+
HY
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
HYNIX
22+
TSOP-48
32350
原裝正品 假一罰十 公司現(xiàn)貨
詢價
HYNIX
23+
TSOP48
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
HYNIX/海力士
21+
TSOP48
10000
原裝現(xiàn)貨假一罰十
詢價
HY
TSOP48
68900
原包原標簽100%進口原裝常備現(xiàn)貨!
詢價
更多HY29LV400BT70I供應(yīng)商 更新時間2024-11-16 11:50:00