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首頁 >HY628100B-E>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
HY628100B-E	文件：175.71 Kbytes Page：10 Pages	128K x8 bit 5.0V Low Power CMOS slow SRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HM628100I	文件：91.14 Kbytes Page：17 Pages	WideTemperatureRangeVersion8MSRAM(1024-kwordx8-bit)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
HY628100A	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100AG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100ALG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100ALLG	文件：128 Kbytes Page：9 Pages	128Kx8bitCMOSSRAM DESCRIPTION TheHY628100Aisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100AuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywell suitedforused	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100B	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100B-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLLG	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLLG-E	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix
HY628100BLLG-I	文件：175.71 Kbytes Page：10 Pages	128Kx8bit5.0VLowPowerCMOSslowSRAM DESCRIPTION TheHY628100Bisahighspeed,lowpowerand1MbitCMOSStaticRandomAccessMemoryorganizedas131,072wordsby8bit.TheHY628100BuseshighperformanceCMOSprocesstechnologyanddesignedforhighspeedlowpowercircuittechnology.Itisparticularywellsuitedforusedinhigh	HynixHynix Semiconductor 海力士海力士半導(dǎo)體	Hynix

詳細參數(shù)

型號：
HY628100B-E
制造商：
HYNIX
制造商全稱：
Hynix Semiconductor
功能描述：
128K x8 bit 5.0V Low Power CMOS slow SRAM

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
上海意淼電子科技有限公司	HY628100BGLL-70	ST臺	23+	NA	6500	全新原裝假一賠十	詢價
深圳市一線半導(dǎo)體有限公司	HY628100BLG	A	24+	SOP	160		詢價
深圳市創(chuàng)新跡電子有限公司	HY628100BLG	HYUNDAI	23+	SSOP	6500	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市安富世紀電子有限公司	HY628100BLG	HYUNDAI	23+	SSOP	6500	專注配單,只做原裝進口現(xiàn)貨	詢價
深圳市芯誠實創(chuàng)科技有限公司	HY628100BLG-55	HYUNDAI	2022	SOP	8500	全新原裝現(xiàn)貨	詢價
貿(mào)澤芯城（深圳）電子科技有限公司	HY628100BLG-55	HY	23+	SOP	3964	一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、	詢價
深圳市宏捷佳電子科技有限公司	HY628100BLG-55	HYNIX	2023+	SOP32	50000	原裝現(xiàn)貨	詢價
深圳市柯爾基電子有限公司	HY628100BLG-55	HYUNDAI	23+24	SOP-	9680	原盒原標.進口原裝.支持實單 .價格優(yōu)勢	詢價
深圳市科恒偉業(yè)電子有限公司	HY628100BLG-70	HYNIX	2016+	SOP32	6528	只做進口原裝現(xiàn)貨!假一賠十!	詢價
深圳宇航軍工半導(dǎo)體有限公司	HY628100BLG-70	HYNIX	19+		256800	原廠代理渠道,每一顆芯片都可追溯原廠；	詢價

更多HY628100B-E供應(yīng)商更新時間2025-1-3 9:59:00

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