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MS8N50

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSF8N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

MTB8N50E

TMOSPOWERFET8.0AMPERES500VOLTS

TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithhigherpowerandlowerRDS(on)capabilities.ThishighvoltageMOSFETusesanadvancedterminationscheme

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB8N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=8A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTH8N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTH8N50E

TMOSE-FETHighEnergyPowerFETN-ChannelEnhancement-ModeSiliconGate

TMOSE-FETHighEnergyPowerFET N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET8.0AMPERESrDS(on)=.0.8OHMS500VOLTS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTN8N50FP

N-ChannelEnhancementModePowerMOSFET

CYSTEKECCystech Electonics Corp.

全宇昕科技全宇昕科技股份有限公司

MTP8N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP8N50E

TMOSPOWERFET8.0AMPERES500VOLTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號:

    HY8N50T

  • 制造商:

    HY

  • 制造商全稱:

    HY ELECTRONIC CORP.

  • 功能描述:

    500V/8.0A N-Channel Enhancement Mode MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
HUAYU
21+
SOP-20
10000
原裝現(xiàn)貨假一罰十
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HUAYU
2025+
SOP-20
3685
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
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24+
N/A
64000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
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23+
65480
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泰科漢澤
23+
SMD
10000
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DIP28
3629
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HR
23+
RJ45
3200
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
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HR
2022+
原廠封裝
90000
原廠原盒現(xiàn)貨,年底清倉大特價!送
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HR
2447
RJ45
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
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HANRUN
1736+
RJ45
15238
原廠優(yōu)勢渠道
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更多HY8N50T供應(yīng)商 更新時間2025-4-26 10:10:00