HYB3118160BST-70中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.

The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.

Advanced Information

? 1 048 576 words by 16-bit organization

? 0 to 70 °C operating temperature

? Performance:

? Single + 3.3 V (± 0.3 V) supply

? Low power dissipation

max. 720 active mW ( HYB3118160BSJ/BST-50)

max. 648 active mW ( HYB3118160BSJ/BST-60)

max. 576 active mW ( HYB3118160BSJ/BST-70)

max. 360 active mW ( HYB3116160BSJ/BST-50)

max. 324 active mW ( HYB3116160BSJ/BST-60)

max. 288 active mW ( HYB3116160BSJ/BST-70)

7.2 mW standby (LV-TTL)

3.6 mW standby (LV-CMOS)

720 μW standby for L-version

? Output unlatched at cycle end allows two-dimensional chip selection

? Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh

? Fast page mode capability

? 2 CAS / 1 WE

? All inputs, outputs and clocks fully LV-TTL-compatible

? 1024 refresh cycles / 16 ms for HYB 3118160BSJ

? 4096 refresh cycles / 64 ms for HYB 3116160BSJ

? Plastic Package: P-SOJ-42-1 400 mil P-TSOPII-50/44-1 400mil