HYB314171BJL-60中文資料西門(mén)子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

3.3V 256 K x 16-Bit Dynamic RAM

3.3V Low Power 256 K x 16-Bit

Dynamic RAM with Self Refresh

The HYB 314171BJ/BJL is a 4 MBit dynamic RAM organized as 262 144 words by 16-bit. The HYB 314171BJ/BJL utilizes CMOS silicon gate process as well as advanced circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 314171BJ/BJL to be packed in a standard plastic 400mil wide P-SOJ-40-1 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include Self Refresh (LVersion), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families.

Preliminary Information

? 262 144 words by 16-bit organization

? 0 to 70 °C operating temperature

? Fast access and cycle time

? RAS access time:

50 ns (-50 version)

60 ns (-60 version)

70 ns (-70 version)

? CAS access time:

15ns (-50,-60 version)

20 ns (-70 version)

? Cycle time:

95 ns (-50 version)

110 ns (-60 version)

130 ns (-70 version)

? Fast page mode cycle time

35 ns (-50 version)

40 ns (-60 version)

45 ns (-70 version)

? Single + 3.3 V (± 0.3 V) supply with a built-in VBB generator

? Low Power dissipation

max. 450 mW active (-50 version)

max. 378 mW active (-60 version)

max. 306 mW active (-70 version)

? Standby power dissipation

7.2 mW standby (TTL)

3.6 mW max. standby (CMOS)

0.72 mW max. standby (CMOS) for Low Power Version

? Output unlatched at cycle end allows two-dimensional chip selection

? Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh, hidden-refresh and fast page mode capability

? 2 CAS / 1 WE control

? Self Refresh (L-Version)

? All inputs and outputs TTL-compatible

? 512 refresh cycles / 16 ms

? 512 refresh cycles / 128 ms

Low Power Version only

? Plastic Packages:

P-SOJ-40-1 400mil width