HYB39S64160AT-8中文資料西門(mén)子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

64 MBit Synchronous DRAM

? High Performance:

? Fully Synchronous to Positive Clock Edge

? 0 to 70°C operating temperature

? Four Banks controlled by BA0 & BA1

? Programmable CASLatency: 2 & 3

? Programmable Wrap Sequence: Sequential or Interleave

? Programmable Burst Length: 1, 2, 4, 8

? full page (optional) for sequential wrap around

? Multiple Burst Read with Single Write Operation

? Automatic and Controlled Precharge Command

? Data Mask for Read / Write control (x4, x8)

? Data Mask for byte control (x16)

? Auto Refresh (CBR) and Self Refresh

? Suspend Mode and Power Down Mode

? 4096 refresh cycles / 64 ms

? Random Column Address every CLK ( 1-N Rule)

? Single 3.3V +/- 0.3V Power Supply

? LVTTL Interface version

? Plastic Packages: P-TSOPII-54 400mil width (x4, x8, x16)

? -8 version for PC100 2-2-2 applications

-8B version for PC100 3-2-3 applications