HYB5118160BSJ-60中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode)

The HYB 5(3)118160 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high system bit densities and is compatible with commonly used automatic testing and insertion equipment.

Advanced Information

? 1 048 576 words by 16-bit organization

? 0 to 70 °C operating temperature

? Fast Page Mode operation

? Performance:

? Power Dissipation, Refresh & Addressing:

? Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh

? All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible

? Plastic Package: P-SOJ-42-1 400 mil