HYB5118165BST-60中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

1M × 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)

The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.

Advanced Information

? 1 048 576 words by 16-bit organization

? 0 to 70 °C operating temperature

? Hyper Page Mode-EDO-operation

? Performance:

? Power Dissipation, Refresh & Addressing:

? Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh

? All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible

? Plastic Package: P-SOJ-42-1 400 mil

P-TSOPII-50/44-1 400 mil