HYM321000S中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by 32- bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M × 16 DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 μF ceramic decoupling capacitors on a PC board.

Advanced Information

? 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit)

? Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version)

? Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version)

? Single + 5 V (± 10 ) supply

? Low power dissipation max 2200 mW active (-50 version) max. 1980 mW active (-60 version) CMOS – 11 mW standby TTL – 22 mW standby

? CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh

? 2 decoupling capacitors mounted on substrate

? All inputs, outputs and clock fully TTL compatible

? 72 pin Single in-Line Memory Module

? Utilizes two 1M × 16 -DRAMs in SOJ-42 packages

? 1024 refresh cycles/16 ms

? Optimized for use in byte-write non-parity applications

? Tin-Lead contact pads HYM 321000S

? Gold-Lead contact pads HYM 321000GS

? single sided module with 20.32 mm (800 mil) height