HYM322035GS-60中文資料西門子數(shù)據(jù)手冊PDF規(guī)格書

The HYM 322035S/GS-50/-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5117805BSJ 2M × 8 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 μF ceramic decoupling capacitors on a PC board.

Advanced Information

? 2 097 152 words by 32-bit organization

? 1 memory bank

? Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

70 ns access time

124 ns cycle time (-70 version)

? Hyper page mode - EDO capability

35 ns cycle time (-50 version)

40 ns cycle time (-60 version)

45 ns cycle time (-70 version)

? Single + 5 V (± 10 ) supply

? Low power dissipation

max. 2640 mW active (-50 version)

max. 2420 mW active (-60 version)

max. 2200 mW active (-70 version)

CMOS – 22 mW standby

TTL –44 mW standby

? CAS-before-RAS refresh RAS-only-refresh Hidden-refresh

? 4 decoupling capacitors mounted on substrate

? All inputs, outputs and clocks fully TTL compatible

? 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height

? Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages

? 2048 refresh cycles / 32 ms with 11/10 addressing

? Optimized for use in byte-write non-parity applications

? Tin-Lead contact pads (S-version)

? Gold contact pads (GS - version)