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HYS64V4120GU中文資料西門子數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
HYS64V4120GU |
功能描述 | 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module |
文件大小 |
72.85 Kbytes |
頁(yè)面數(shù)量 |
11 頁(yè) |
生產(chǎn)廠商 | Siemens Semiconductor Group |
企業(yè)簡(jiǎn)稱 |
SIEMENS【西門子】 |
中文名稱 | 德國(guó)西門子股份公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-24 15:00:00 |
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HYS64V4120GU規(guī)格書(shū)詳情
3.3V 4M x 64-Bit 2 BANK SDRAM Module
3.3V 4M x 72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
The HYS64(72)V4120GU-10 are industry standard 168-pin 8-byte Dual in-line Memory Modules (DIMMs) which are organised as 4M x 64 and 4M x 72 in two banks high speed memory arrays designed with Synchronous DRAMs (SDRAMs) for non-parity and ECC applications. The DIMMs use 16 2M x 8 SDRAMs for the 4M x 64 organisation and additional two SDRAMs for the 4M x 72 organisation. Decoupling capacitors are mounted on the PC board.
? 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module for PC main memory applications
? 2 bank 4M x 64, 4M x 72 organisation
? Optimized for byte-write non-parity or ECC applications
? Fully PC66 layout compatible
? JEDEC standard Synchronous DRAMs (SDRAM)
? Performance:
? Single +3.3V(± 0.3V ) power supply
? Programmable CAS Latency, Burst Length and Wrap Sequence (Sequential & Interleave)
? Auto Refresh (CBR) and Self Refresh
? Decoupling capacitors mounted on substrate
? All inputs, outputs are LVTTL compatible
? Serial Presence Detect with E2PROM
? Utilizes 16 / 18 2M x 8 SDRAMs in TSOPII-44 packages
? 4096 refresh cycles every 64 ms
? Gold contact pad
? Card Size: 133,35 mm x 29.21 mm x 4,00 mm for HYS64(72)V4120GU
產(chǎn)品屬性
- 型號(hào):
HYS64V4120GU
- 制造商:
INFINEON
- 制造商全稱:
Infineon Technologies AG
- 功能描述:
3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module