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I11NM80

N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

P11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM80

N-channel800V,0.35Ω,11AMDmesh?PowerMOSFETinD2PAK,TO-220FP,I2PAK,TO-220,TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM80

N-channel800V,0.35廓,11AMDmesh??PowerMOSFETTO-220,TO-220FP,D2PAK,TO-247

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM80

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM80

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STB11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF11NM80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

STF11NM80

N-CHANNEL800V-0.35ohm-11ATO-220/FP/D2PAK/TO-247MDmeshPowerMOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF11NM80

N-channel800V-0.35廓-11A-TO-220/FP-D2PAK-TO-247MDmesh??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
N/A
2022+
190
全新原裝 貨期兩周
 詢價(jià)
SICK
20+
開關(guān)元件
96
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
HAR絕對(duì)原裝
9104
CDIP-14P
225
普通
 詢價(jià)
H
23+
CDIP14
20000
原廠原裝正品現(xiàn)貨
 詢價(jià)
H
2023+
CDIP14
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
 詢價(jià)
H
23+
CDIP14
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
H
23+
CDIP14
5000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HARRIS
05+
原廠原裝
4317
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
HARRIS
23+
MSOP
5000
原裝正品,假一罰十
 詢價(jià)
HARRIS/哈里斯
22+
DIP
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多I11NM80供應(yīng)商 更新時(shí)間2025-2-1 9:50:00

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