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I20N50

20A 500V N-channel Enhancement Mode Power MOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

SMPSMOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharac

IRF

International Rectifier

IRFB20N50K

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?LowRDS(on) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50K

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50KPBF

HEXFETPowerMOSFET

Applications SwitchModePowerSupply(SMPS) UninterruptiblePowerSupply HighSpeedPowerSwitching HardSwitchedandHighFrequencyCircuits Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyC

IRF

International Rectifier

IRFB20N50KPBF

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB20N50KPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB20N50KPBF

PowerMOSFET

FEATURES ?LowgatechargeQgresultsinsimpledrive requirement ?Improvedgate,avalanche,anddynamicdV/dt ruggedness ?Fullycharacterizedcapacitanceandavalanchevoltage andcurrent ?LowRDS(on) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/d

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFP20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFQ20N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=300mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTH20N50D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ?NormallyONMode ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Levelshifting ?Triggers ?SolidStateRelays ?CurrentRegulators ?Activeload

IXYS

IXYS Corporation

IXTT20N50D

HighVoltageMOSFET

HighVoltageMOSFET N-Channel,DepletionMode Features ?NormallyONMode ?Internationalstandardpackages ?MoldingepoxiesmeetUL94V-0flammabilityclassification Applications ?Levelshifting ?Triggers ?SolidStateRelays ?CurrentRegulators ?Activeload

IXYS

IXYS Corporation

JMP20N50A

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者：深圳市溢航科技有限公司

MSF20N50

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MSW20N50

500VN-ChannelMOSFET

BWTECH

Bruckewell Technology LTD

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3200
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