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IPM-C853

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

IPM-L853

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊

KRC853E

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會(huì)社

KRC853U

EPITAXIALPLANARNPNTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT)

SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors. ●SimplifyCircuitDesign. ●ReduceaQuantityofPartsandManufacturingProcess. ●HighPackingDensity.

KECKEC CORPORATION

KEC株式會(huì)社

KSC853

NPN(LOWFREQUENCYAMPLIFIER)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MAX853

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853C/D

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853ESA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX853ISA

Low-Noise,Regulated,NegativeCharge-PumpPowerSuppliesforGaAsFETBias

GeneralDescription TheMAX850–MAX853low-noise,inverting,chargepumppowersuppliesareidealforbiasingGaAsFETsincellulartelephonetransmitteramplifiers. TheMAX850–MAX852offerbothpreset(-4.1V)andadjustable(-0.5Vto-9.0V)outputvoltages.TheMAX853usesanexternalpositiveco

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MC853

INTEGRATEDCIRCUITS

INTEGRATEDCIRCUITSFROMMOTOROLA MDTLintegratedcircuitsprovideanexcellentbalanceofspeedpowerdissipation,andnoiseimmunityforgeneralpurposedigitalapplications.Thelineincludesmanymultifunctiontypes.AdditionallogicpowerisprovidedbythewiredORcapabilityofthebasicM

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MPC853T

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MPC853TEC

MPC853THardwareSpecification

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES ?PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ?Fastswitchingforhighefficiency ?Lowforwardvoltagedrop ?Singlerectifierconstruction ?Highsurgecapability ?Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MUR853

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒濟(jì)南晶恒電子有限責(zé)任公司

MZ853

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NDH853N

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocessisespeciallytailoredtominimizeon-stateresistanceandprovidesuperiorswitchingperformance.Thes

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

NTE853

IntegratedCircuitLowPower,NarrowBand,FMIFSystem

Description: TheNTE853isalowpowernarrowbandFMIFsystemwhichincludes:Oscillator,Mixer,LimitingAmplifier,QuadratureDiscriminator,ActiveFilter,Squelch,ScanControlandMuteSwitch.TheNTE853isdesignedforuseinFMdualconversioncommunicationsequipment. Features: ●LowD

NTE

NTE Electronics

PC853

HighCollector-emitterVoltageTypePhotocouplers

1.Highcollector-emittervoltage 2.Highcurrenttransferratio 3.Highisolationvoltagebetweeninputandoutput 4.Compactdual-in-linepackage

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

PC853H

HighCollector-emitterVoltageTypePhotocouplers

1.Highcollector-emittervoltage 2.Highcurrenttransferratio 3.Highisolationvoltagebetweeninputandoutput 4.Compactdual-in-linepackage

SHARPSharp Microelectronics of the Americas (SMA)

夏普微美國(guó)夏普微電子公司(SMA)

PFR853

FASTRECOVERYRECTIFIERDIODE

DESCRIPTION Theirhighefficiencyandhighreliabilitycombinedwithsmallsizeandlowcostmakethesefastrecoveryrectifierdiodeveryattractivecomponentsformanydemandingapplications. ■LOWFORWARDVOLTAGEDROP ■HIGHSURGECURRENTCAPABILITY APPLICATIONS ■AC-DCPOWERSUPPLIESAND

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào):

    I853

  • 制造商:

    Newport Electronics Inc

  • 功能描述:

    TEMPERATURE CTRL 20VDC TO 36V

  • 功能描述:

    TEMPERATURE CTRL, 20VDC TO 36VDC

  • 功能描述:

    TEMPERATURE CTRL, 20VDC TO 36VDC, No. of

  • Digits/Alpha:

    4, Meter

  • Function:

    Temperature Controller, Meter

  • Range:

    0mA to 20mA/0V to 10V, Digit

  • Height:

    21mm, Panel Cutout

  • Height:

    45mm, Panel Cutout

  • Width:

    92mm , RoHS

  • Compliant:

    NA

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DIALOG
24+
PLCC-28
200
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10+
PLCC-28
7800
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24+
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2000
全新進(jìn)口原裝現(xiàn)貨熱賣!
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DIP28
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
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2023+
PLCC-44
50000
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DONGHAI
23+
TO-262
80000
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INTEL/英特爾
23+
QFP
3000
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INTEL/英特爾
23+
QFP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
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INTEL/英特爾
23+
QFP
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
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N/A
22+
DIP
44
全新原裝現(xiàn)貨
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更多I853供應(yīng)商 更新時(shí)間2024-12-31 16:30:00