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IM840

Directpintopindrop-inreplacementforindustry-standardpackages

ILSI

ILSI America LLC

IM840B

MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz

MMD

MMD Components

IM840B

Directpintopindrop-inreplacementforindustry-standardpackages

ILSI

ILSI America LLC

IM840C

MemsOscillator,HighPerformanceDifferentialOscillator,LVPECLandLVDS1.000MHzto220.000MHz

MMD

MMD Components

IM840C

Directpintopindrop-inreplacementforindustry-standardpackages

ILSI

ILSI America LLC

IRC840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRC840PBF

HEXFETPowerMOSFET

Description ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheHEXSensedeviceprovidesanaccuratefractionofthedraincurrentthroughtheadditionaltw

IRF

International Rectifier

IRF840

N-CHANNEL500V-0.75ohm-8A-TO-220PowerMESH]MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

IRF840

PowerMOStransistorAvalancheenergyrated

DESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitched modepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.TheIRF840issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF840

N-CHANNELENHANCEMENT-MODESILICONGATETMOSPOWERFIELDEFFECTTRANSISTOR

Motorola

Motorola, Inc

IRF840

N-CHANNELPOWERMOSFETS

FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導體

IRF840

500VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF840

N-ChannelPowerMOSFETs,8A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedsepeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF840

8A,500V,0.850Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitchin

Intersil

Intersil Corporation

IRF840

PowerMOSFET(Vdss=500V,Rds(on)=0.85ohm,Id=8.0A)

500Volt,0.85OhmHEXFETTO-220ABPlasticPackage TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancelineofpowerMOSFETtransistors.TheefficientgemmetryanduniqueprocessingofthislatestStateoftheArtdesignachieves:verylowon-stateresistancecombinedwithhight

IRF

International Rectifier

IRF840

TRANSISTORSN-CHANNEL

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORSN-CHANNEL

IRF

International Rectifier

IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF840

iscN-ChannelMosfetTransistor

Designedforhighvoltage,highspeedswitchingpowerapplicationssuchasswitchingregulators,converters,solenoidandrelay FEATURES 1.DrainCurrent–ID=8.0A@TC=25℃ 2.DrainSourceVoltage-:VDSS=500V(Min) 3.StaticDrain-SourceOn-Resistance:RDS(on)=0.8

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數

  • 型號：

    IB840F-R

  • 制造商：

    IBase Technology(USA) Inc.

  • 功能描述：

    FS, SOCKET478, 865G, FSB800MHZ, SUPPORT DDR, W/ 82551 LANX1 - Bulk

供應商型號品牌批號封裝庫存備注價格
ST
23+
QFN
59922
##公司主營品牌長期供應100%原裝現貨可含稅提供技術
 詢價
TDK-LAMBD
2018+
DIP
500
TDK-LAMBDA電源專營現貨原裝正品專營
 詢價
TDK/東電化
1948+
MODULE
6852
只做原裝正品現貨!或訂貨假一賠十!
 詢價
TDK/東電化
2048+
MODULE
9852
只做原裝正品現貨!或訂貨假一賠十!
 詢價
TDK/東電化
1535+
392
詢價
TDK-LAMBDA
原廠封裝
840
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
TDK
2023+
SMD
1699
安羅世紀電子只做原裝正品貨
 詢價
TDK/東電化
23+
392
全新原裝，歡迎來電咨詢
 詢價
TDK-LAMBDA
20+
電源模塊
335
就找我吧!--邀您體驗愉快問購元件!
 詢價
PREMIER
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
更多IB840F-R供應商 更新時間2024-11-16 14:08:00

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