首頁 >IC-640-EGT>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

ICA-640-SGG

AUTOMATEDINSERTIONDIPSOCKETS

Samtec

Samtec, Inc

iC-LFH640

HIGH-RESOLUTIONLINEARIMAGESENSORS

ICHAUS

IC-Haus GmbH

IIRF640N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IQXO-640

CrystalClockOscillatorSpecification

IQD

IQD Frequency Products Ltd

IQXO-640

Standard1.6x1.2mmcrystaloscillatorinaceramicpackagewithaseamsealedmetallid,hermeticallysealed

IQD

IQD Frequency Products Ltd

IRC640

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRC640PBF

HEXFETPOWERMOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF640

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwithbestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredallcommercial-industrialapplicationsatpowerdissipat

IRF

International Rectifier

IRF640

N-CHANNEL200V-0.150ohm-18ATO-220/TO-220FPMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusinghecompany’sconsolidatedstriplayout-basedMESHOVERLAY?process.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.150? ■EXTREMELYHIGHdV/dtCAPABILITY ■VERYLOW

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

IRF640

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF640

N-ChannelPowerMOSFETs,18A,150-200V

N-ChannelPowerMOSFETs,18A,150-200V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

18A,200V,0.180Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=18A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Designedforlowvoltage,highspeedpowerswitching applicationssuch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF640

N-ChannelEnhancementModePOWERMOSFET

Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WEITRON

Weitron Technology

IRF640

POWERTRMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

SUNTAC

Suntac Electronic Corp.

IRF640

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. Features *RepetitiveAvalancheRated *FastSwitching *EaseofParalleling *SimpleDriveRequirements

DCCOM

Dc Components

IRF640

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

FEATURE NchannelinaplasticTO220package. Theyareintendedforuseinhighspeedpowerswitching,low voltage,relaydriversandgeneralpurposeswitching applications. DC-DC&DC-ACconvertersfortelecom,industrialandlighting equipment. CompliancetoRoHS.

COMSET

Comset Semiconductor

IRF640

18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ◆SiliconGateforFastSwitchingSpeeds ◆LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevated Temp

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IC-640-EGT

  • 制造商：

    Samtec Inc

  • 功能描述：

    CONN DIP SCKT SKT 40 POS 2.54MM ST TH - Bulk

  • 功能描述：

    Conn DIP Socket SKT 40 POS 2.54mm ST Thru-Hole Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMTEC
新
291
全新原裝 貨期兩周
 詢價
Samtec
50
公司優(yōu)勢庫存 熱賣中!!
 詢價
HOLTEK
23+
SOP-28
1004
優(yōu)勢庫存
 詢價
HOLTEK
22+23+
SOP28
26699
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
HOLTEK
20+
SOP28
2960
誠信交易大量庫存現(xiàn)貨
 詢價
HOLTEK/合泰
24+
SOP28
1044
原裝現(xiàn)貨假一賠十
 詢價
HOLTEK/合泰
22+
SOP28
696
誠信經(jīng)營..品質(zhì)保證..價格優(yōu)勢
 詢價
Schneider
2306+
NA
6680
原裝正品公司現(xiàn)貨,實單來談
 詢價
OMRON
連接器
123500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
其他
2021+
微型斷路器
500
只做原裝，可提供樣品
 詢價
更多IC-640-EGT供應(yīng)商 更新時間2024-11-1 16:05:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多