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IC41LV16100S-60T中文資料ICSI數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IC41LV16100S-60T
廠商型號(hào)

IC41LV16100S-60T

功能描述

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件大小

672.77 Kbytes

頁(yè)面數(shù)量

21 頁(yè)

生產(chǎn)廠商 Integrated Circuit Solution Inc
企業(yè)簡(jiǎn)稱

ICSI

中文名稱

Integrated Circuit Solution Inc官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-18 20:43:00

IC41LV16100S-60T規(guī)格書(shū)詳情

DESCRIPTION

The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IC41C16100S ideal for use in 16-, 32-bit wide data bus systems.

FEATURES

? Extended Data-Out (EDO) Page Mode access cycle

? TTL compatible inputs and outputs; tristate I/O

? Refresh Interval:

Refresh Mode: 1,024 cycles /16 ms

RAS-Only, CAS-before-RAS(CBR), and Hidden

Self refresh Mode- 1,024 cycles / 128ms

? JEDEC standard pinout

? Single power supply:

5V ± 10 (IC41C16100S)

3.3V ± 10 (IC41LV16100S)

? Byte Write and Byte Read operation via two CAS

? Industrail Temperature Range -40°C to 85°C

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