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IRF630A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.333Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630A

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed ?LowDriveRequirement APPLICATIONS ?Thisdeviceisn-channel,enhancementmode,powerMOSFET designedespecia

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingKersemiproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighe

KERSEMI

Kersemi Electronic Co., Ltd.

IRF630B

N-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=9A@TC=25℃ ?DrainSourceVoltage- :VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?DesingedforhighefficiencyswitchingDC/DCconverters, switchmodepowersupplies,DC-ACconver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF630B

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=9A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·FastSwitchingSpeed ·LowDriveRequirement ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·This

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630F

N-channelmosfettransistor

?Features ·WithTO-220Fpackage ·Lowon-stateandthermalresistance ·Fastswitching ·VDSS=200V;RDS(ON)≤0.4Ω;ID=9A ·1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF630FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25? ■AVALANCERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■APPLICATIONORIENTEDCHARACHTERIZATION APPLICATIONS ■HIGHSPEEDSWITCHING ■UNINTERRUPTIBLEPOWERSUPPLY(UPS) ■MOTORCO

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF630FI

iscN-ChannelMOSFETTransistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?RDS(on)=0.4Ω ?6Aand200V ?singlepulseavalancheenergyrated ?SOAisPower-DissipationLimited ?LinearTransfer

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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