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INA254

INA254,80V,High-Voltage,?50AIntegratedPrecisionShunt,Bidirectional,Zero-DriftCurrent-ShuntMonitor

TITexas Instruments

德州儀器美國德州儀器公司

INA254

INA25480-V,High-Voltage,±75-AIntegratedPrecisionShunt,Bidirectional,Zero-DriftCurrent-ShuntMonitor

1Features ?Precisionintegrated400-μΩshuntresistor –Continuous±75Aat25°C –Continuous±50Afrom–40°Cto+85°C –Shuntresistortolerance:0.5(maximum) –Lowdrift:10ppm/°C(0°Cto125°C) –Lowinductance:2nH ?Highaccuracy –Systemgainerror:0.5(maximum) –Systemgain

TITexas Instruments

德州儀器美國德州儀器公司

IRF254

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF254

NanosecondSwitchingSpeed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF254

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM254

PulsewidthlimitedbyMaximumJunctionTemperature

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP254

PowerMOSFET(Vdss=250V,Rds(on)=0.14ohm,Id=23A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?IsolatedCentralMountingHole ?FastS

IRF

International Rectifier

IRFP254

StandardPowerMOSFET-N-ChannelEnhancementMode

StandardPowerMOSFET N-ChannelEnhancementMode Features ?Internationalstandardpackage JEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-mode po

IXYS

IXYS Corporation

IRFP254

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP254

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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SONY
CCD16
6500
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80000
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SONY
2016+
CCDDIP
6528
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SONY
2016+
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3500
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SONY
19+
74015
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SONY
23+
CCDDIP
8650
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Sony
20+
PGA
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2022+
143
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SONY
2022
1120
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更多ICX254BLT供應(yīng)商 更新時(shí)間2025-2-23 9:29:00