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IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF9150

iscP-ChannelMOSFETTransistor

?DESCRIPTION ?Bedesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower. ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤0.15? ?

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9150

-25A,-100V,0.150Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9150

25A,100V,0.150Ohm,P-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicon-gatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators, switchingc

Intersil

Intersil Corporation

IRH9150

SimpleDriveRequirements

IRF

International Rectifier

IRH9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(T0-204AE) InternationalRectifier’sRADHardHEXFET?technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeenchara

IRF

International Rectifier

IRHM9150

SimpleDriveRequirements

IRF

International Rectifier

IRHM9150

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA)

IRF

International Rectifier

IRHN9150

TRANSISTORP-CHANNEL(BVdss=-100V,Rds(on)=0.120ohm,Id=-22A)

InternationalRectifier’sRADHardHEXFETTMtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.ThesedeviceshavebeencharacterizedforbothTotalDoseandSingleEventEffec

IRF

International Rectifier

IRHN9150

SimpleDriveRequirements

IRF

International Rectifier

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AMD
21+
DIP
8080
原裝現(xiàn)貨實單必成 只做原裝!
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AMD
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105
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IDESYN
2015+
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29898
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IDESYN
24+
SOT23-5
33000
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23+
SOT23-5
369265
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IDESYN
22+
NA
155747
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IDESYN
21+
SOT89-3-L
30100
只做正品原裝現(xiàn)貨
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IDESYN
23+
SOT89-3
50000
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iDESYN
21+
SOT89-3
10000
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IDESYN
2022
SOT89-3
80000
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更多ID9150BM供應(yīng)商 更新時間2025-1-21 14:02:00