IDH16G65C5分立半導(dǎo)體產(chǎn)品的二極管-整流器-單規(guī)格書PDF中文資料

IDH16G65C5屬于分立半導(dǎo)體產(chǎn)品的二極管-整流器-單。由英飛凌科技股份公司制造生產(chǎn)的IDH16G65C5二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個方向流動，并且每個器件封裝都恰好實(shí)現(xiàn)該功能的一個實(shí)例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨(dú)列在各自的產(chǎn)品系列中，每個器件封裝中包含多個二極管的產(chǎn)品也是如此。

1 Description

ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,

already introduced with G3 is now combined with a new, more compact design and

thin-wafer technology. The result is a new family of products showing improved

efficiency over all load conditions, resulting from both the improved thermal

characteristics and a lower figure of merit (Qc x Vf).

The new thinQ!? Generation 5 has been designed to complement our 650V

CoolMOS? families: this ensures meeting the most stringent application

requirements in this voltage range.

Features

? Revolutionary semiconductor material - Silicon Carbide

? Benchmark switching behavior

? No reverse recovery/ No forward recovery

? Temperature independent switching behavior

? High surge current capability

? Pb-free lead plating; RoHS compliant

? Qualified according to JEDEC1) for target applications

? Breakdown voltage tested at 35 mA2)

? Optimized for high temperature operation

Benefits

? System efficiency improvement over Si diodes

? System cost / size savings due to reduced cooling requirements

? Enabling higher frequency / increased power density solutions

? Higher system reliability due to lower operating temperatures

? Reduced EMI