IDT6167LA55YB中文資料IDT數(shù)據手冊PDF規(guī)格書

DESCRIPTION:

The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology.

Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW operating off a 2V battery.

FEATURES:

? High-speed (equal access and cycle time)

— Military: 15/20/25/35/45/55/70/85/100ns (max.)

— Commercial: 15/20/25/35ns (max.)

? Low power consumption

? Battery backup operation — 2V data retention voltage (IDT6167LA only)

? Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ

? Produced with advanced CMOS high-performance technology

? CMOS process virtually eliminates alpha particle softerror rates

? Separate data input and output

? Military product compliant to MIL-STD-883, Class B