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IDT70T633S8BF中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書

IDT70T633S8BF
廠商型號(hào)

IDT70T633S8BF

功能描述

HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

文件大小

342.05 Kbytes

頁(yè)面數(shù)量

27 頁(yè)

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2025-1-7 17:56:00

IDT70T633S8BF規(guī)格書詳情

Description

The IDT70T633/1 is a high-speed 512/256K x 18 Asynchronous Dual-Port Static RAM. The IDT70T633/1 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 8/10/12/15ns (max.)

– Industrial: 10/12ns (max.)

◆ RapidWrite Mode simplifies high-speed consecutive write cycles

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70T633/1 easily expands data bus width to 36 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ Full hardware support of semaphore signaling between ports on-chip

◆ On-chip port arbitration logic

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Sleep Mode Inputs on both ports

◆ Supports JTAG features compliant to IEEE 1149.1 in BGA-208 and BGA-256 packages

◆ Single 2.5V (±100mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 256-ball Ball Grid Array, 144-pin Thin Quad Flatpack and 208-ball fine pitch Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

產(chǎn)品屬性

  • 型號(hào):

    IDT70T633S8BF

  • 功能描述:

    IC SRAM 9MBIT 8NS 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

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原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源!
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QQ咨詢
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專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
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公司只售原裝,支持實(shí)單
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