首頁(yè) >IDT70T659S12BCI>規(guī)格書列表

零件編號(hào)下載&訂購(gòu)功能描述制造商&上傳企業(yè)LOGO

IDT70T659S12BCI

HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

70T659S12BC

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T659S12BCG

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BCG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BCGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BCGI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BCI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T659S12BFG

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BFG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BFGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BFGI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12BFI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T659S12DRG

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12DRG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12DRGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T659S12DRGI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70T659S12BC

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T659S12BF

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T659S12BFI

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

IDT70T659S12DR

HIGH-SPEED2.5V256/128Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T651/9isahigh-speed256/128Kx36AsynchronousDual-PortStaticRAM.TheIDT70T651/9isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor72-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT70T659S12BCI

  • 功能描述:

    IC SRAM 4MBIT 12NS 256BGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
23+
256-CABGA(17x17)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
24+
256BGA
7642
原裝現(xiàn)貨
詢價(jià)
IDT
22+
256CABGA
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IDT
21+
256CABGA
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
256CABGA
9000
原裝正品,支持實(shí)單
詢價(jià)
更多IDT70T659S12BCI供應(yīng)商 更新時(shí)間2024-12-31 17:34:00