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IDT70V3399S133BFI

HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDT

Integrated Device Technology, Inc.

70V3399S133BC

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode –DuetolimitedpincountP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3399S133BCG

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BCG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BCGI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BCGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BCI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode –DuetolimitedpincountP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3399S133BF

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode –DuetolimitedpincountP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3399S133BFG

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BFG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BFGI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BFGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133BFI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode –DuetolimitedpincountP

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3399S133PRFG

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133PRFG

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133PRFGI

HIGH-SPEEDSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3399S133PRFGI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

IDT70V3399S133BC

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V3399S133BCI

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V3399S133BF

HIGH-SPEED3.3V256/128Kx18SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào):

    IDT70V3399S133BFI

  • 功能描述:

    IC SRAM 2MBIT 133MHZ 208FBGA

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

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更多IDT70V3399S133BFI供應(yīng)商 更新時(shí)間2024-12-27 16:49:00