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IDT70V3589S133DR

HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDT

Integrated Device Technology, Inc.

IDT70V3589S133DRI

HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

IDT

Integrated Device Technology, Inc.

70V3589S133BC

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BCG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BCI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BF

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133BFG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133BFI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRG

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRG

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRGI

HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70V3589S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE

Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70V3589S133DRGI

HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

詳細參數(shù)

  • 型號:

    IDT70V3589S133DR

  • 功能描述:

    IC SRAM 2MBIT 133MHZ 208QFP

  • RoHS:

  • 類別:

    集成電路(IC) >> 存儲器

  • 系列:

    -

  • 標準包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲器:

    EEPROMs - 串行

  • 存儲器類型:

    EEPROM

  • 存儲容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應商設備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

供應商型號品牌批號封裝庫存備注價格
IDT
2006+
717
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IDT
23+
208PQFP
9526
詢價
IDT
23+
208-PQFP(28x28)
73390
專業(yè)分銷產品!原裝正品!價格優(yōu)勢!
詢價
IDT
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IDT
23+
QFP
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IDT
08+
NA
100
終端備貨原裝現(xiàn)貨-軍工器件供應商
詢價
IDT
22+
208PQFP
9000
原廠渠道,現(xiàn)貨配單
詢價
IDT
21+
208PQFP
13880
公司只售原裝,支持實單
詢價
IDT
23+
208PQFP
9000
原裝正品,支持實單
詢價
IDT
06+
原廠原裝
4224
只做全新原裝真實現(xiàn)貨供應
詢價
更多IDT70V3589S133DR供應商 更新時間2024-12-28 14:30:00