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IDT70V659S10BF中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IDT70V659S10BF
廠(chǎng)商型號(hào)

IDT70V659S10BF

功能描述

HIGH-SPEED 3.3V 128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

文件大小

194.05 Kbytes

頁(yè)面數(shù)量

23 頁(yè)

生產(chǎn)廠(chǎng)商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱(chēng)

IDT

中文名稱(chēng)

Integrated Device Technology, Inc.官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

更新時(shí)間

2025-1-19 17:37:00

IDT70V659S10BF規(guī)格書(shū)詳情

Description

The IDT70V659/58/57 is a high-speed 128/64/32K x 36 Asynchronous Dual-Port Static RAM. The IDT70V659/58/57 is designed to be used as a stand-alone 4/2/1Mbit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTERSLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.

Features

◆ True Dual-Port memory cells which allow simultaneous access of the same memory location

◆ High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12/15ns (max.)

◆ Dual chip enables allow for depth expansion without external logic

◆ IDT70V659/58/57 easily expands data bus width to 72 bits or more using the Master/Slave select when cascading more than one device

◆ M/S = VIH for BUSY output flag on Master, M/S = VIL for BUSY input on Slave

◆ Busy and Interrupt Flags

◆ On-chip port arbitration logic

◆ Full on-chip hardware support of semaphore signaling between ports

◆ Fully asynchronous operation from either port

◆ Separate byte controls for multiplexed bus and bus matching compatibility

◆ Supports JTAG features compliant to IEEE 1149.1

◆ LVTTL-compatible, single 3.3V (±150mV) power supply for core

◆ LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV) power supply for I/Os and control signals on each port

◆ Available in a 208-pin Plastic Quad Flatpack, 208-ball fine pitch Ball Grid Array, and 256-ball Ball Grid Array

◆ Industrial temperature range (–40°C to +85°C) is available for selected speeds

產(chǎn)品屬性

  • 型號(hào):

    IDT70V659S10BF

  • 功能描述:

    IC SRAM 4MBIT 10NS 208FBGA

  • RoHS:

  • 類(lèi)別:

    集成電路(IC) >> 存儲(chǔ)器

  • 系列:

    -

  • 標(biāo)準(zhǔn)包裝:

    3,000

  • 系列:

    - 格式 -

  • 存儲(chǔ)器:

    EEPROMs - 串行

  • 存儲(chǔ)器類(lèi)型:

    EEPROM

  • 存儲(chǔ)容量:

    8K(1K x 8)

  • 速度:

    400kHz

  • 接口:

    I²C,2 線(xiàn)串口

  • 電源電壓:

    1.7 V ~ 5.5 V

  • 工作溫度:

    -40°C ~ 85°C

  • 封裝/外殼:

    8-SOIC(0.154,3.90mm 寬)

  • 供應(yīng)商設(shè)備封裝:

    8-SOIC

  • 包裝:

    帶卷(TR)

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