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IDT7164S20TP集成電路(IC)的存儲器規(guī)格書PDF中文資料
廠商型號 |
IDT7164S20TP |
參數(shù)屬性 | IDT7164S20TP 封裝/外殼為28-DIP(0.300",7.62mm);包裝為管件;類別為集成電路(IC)的存儲器;產(chǎn)品描述:IC SRAM 64KBIT PARALLEL 28DIP |
功能描述 | CMOS STATIC RAM 64K (8K x 8-BIT) |
封裝外殼 | 28-DIP(0.300",7.62mm) |
文件大小 |
104.93 Kbytes |
頁面數(shù)量 |
9 頁 |
生產(chǎn)廠商 | Integrated Device Technology, Inc. |
企業(yè)簡稱 |
IDT |
中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-16 22:50:00 |
IDT7164S20TP規(guī)格書詳情
Description
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance, high-reliability CMOS technology.
Address access times as fast as 15ns are available and the circuit offers a reduced power standby mode. When CS1 goes HIGH or CS2 goes LOW, the circuit will automatically go to, and remain in, a low power stand by mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-pin 600 mil CERDIP.
Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability.
Features
◆ High-speed address/chip select access time
– Military: 20/25/35/45/55/70/85/100ns (max.)
– Industrial: 25/35ns (max.)
– Commercial: 15/20/25/35ns (max.)
◆ Low power consumption
◆ Battery backup operation – 2V data retention voltage (L Version only)
◆ Produced with advanced CMOS high-performance technology
◆ Inputs and outputs directly TTL-compatible
◆ Three-state outputs
◆ Available in 28-pin DIP, CERDIP and SOJ
◆ Military product compliant to MIL-STD-883, Class B
產(chǎn)品屬性
- 產(chǎn)品編號:
IDT7164S20TP
- 制造商:
Renesas Electronics America Inc
- 類別:
集成電路(IC) > 存儲器
- 包裝:
管件
- 存儲器類型:
易失
- 存儲器格式:
SRAM
- 技術(shù):
SRAM - 異步
- 存儲容量:
64Kb(8K x 8)
- 存儲器接口:
并聯(lián)
- 寫周期時間 - 字,頁:
20ns
- 電壓 - 供電:
4.5V ~ 5.5V
- 工作溫度:
0°C ~ 70°C(TA)
- 安裝類型:
通孔
- 封裝/外殼:
28-DIP(0.300",7.62mm)
- 供應(yīng)商器件封裝:
28-PDIP
- 描述:
IC SRAM 64KBIT PARALLEL 28DIP
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價 | ||
IDT |
24+ |
DIP-28 |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IDT |
23+ |
28-PDIP |
9550 |
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢! |
詢價 | ||
Renesas Electronics Corporatio |
23+/24+ |
28-DIP |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價 | ||
IDT |
24+ |
DIP28 |
3629 |
原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電! |
詢價 | ||
IDT |
23+ |
28300MILPLAS |
9526 |
詢價 | |||
IDT |
22+23+ |
DIP |
39919 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
IDT |
2021+ |
NA |
2630 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IDT |
DIP28 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IDT |
24+ |
DIP28 |
36 |
只做原廠渠道 可追溯貨源 |
詢價 |