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71V124SA15PHG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15PHGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15TYG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15TYGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15YG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15YGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA15

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15PH

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15PHI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15TY

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15TYI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15Y

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15YI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    IDT71V124SA15PHG

  • 功能描述：

    IC SRAM 1MBIT 15NS 32TSOP

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲(chǔ)器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    2,000

  • 系列：

    - 格式 -

  • 存儲(chǔ)器：

    RAM

  • 存儲(chǔ)器類型：

    SRAM - 異步

  • 存儲(chǔ)容量：

    256K(32K x 8)

  • 速度：

    15ns

  • 接口：

    并聯(lián)

  • 電源電壓：

    3 V ~ 3.6 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    28-TSSOP（0.465，11.8mm 寬）

  • 供應(yīng)商設(shè)備封裝：

    28-TSOP

  • 包裝：

    帶卷(TR)

  • 其它名稱：

    71V256SA15PZGI8

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IDT
23+
32-TSOPII
71890
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)!
 詢價(jià)
IDT
11+
TSOP32
1500
全新原裝
 詢價(jià)
IDT
22+
TSOP32
9852
只做原裝正品現(xiàn)貨,或訂貨假一賠十!
 詢價(jià)
IDT
24+
32TSOP
4851
原裝現(xiàn)貨
 詢價(jià)
IDT
22+
32TSOP II
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IDT
21+
32TSOP II
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IDT71V124SA15PHG
1498
1498
詢價(jià)
IDT
23+
32TSOP II
9000
原裝正品，支持實(shí)單
 詢價(jià)
IDT
2020+
TSOP
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
 詢價(jià)
IDT
23+
TSOP
12500
全新原裝現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)
 詢價(jià)
更多IDT71V124SA15PHG供應(yīng)商 更新時(shí)間2025-1-1 16:30:00

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