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71V124SA15PHG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15PHGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15TYG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15TYGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15YG

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

71V124SA15YGI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Features ◆128Kx8advancedhigh-speedCMOSstaticRAM ◆JEDECrevolutionarypinout(centerpower/GND)for reducednoise ◆Equalaccessandcycletimes –Commercial:10/12/15ns –Industrial:10/12/15ns ◆OneChipSelectplusoneOutputEnablepin ◆InputsandoutputsareLVTTL-compatible

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA15

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15PH

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15PHI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15TY

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15TYI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15Y

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA15YI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號(hào)：

    IDT71V124SA15TYGI

  • 功能描述：

    IC SRAM 1MBIT 15NS 32SOJ

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲(chǔ)器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    72

  • 系列：

    - 格式 -

  • 存儲(chǔ)器：

    RAM

  • 存儲(chǔ)器類型：

    SRAM - 同步

  • 存儲(chǔ)容量：

    4.5M（256K x 18）

  • 速度：

    133MHz

  • 接口：

    并聯(lián)

  • 電源電壓：

    3.135 V ~ 3.465 V

  • 工作溫度：

    0°C ~ 70°C

  • 封裝/外殼：

    100-LQFP

  • 供應(yīng)商設(shè)備封裝：

    100-TQFP（14x20）

  • 包裝：

    托盤

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IDT
23+
32-SOJ
71890
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢!
 詢價(jià)
IDT
2339+
TSOP
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
IDT
11+
SOJ32
1500
全新原裝
 詢價(jià)
IDT
24+
32SOJ
2596
原裝現(xiàn)貨
 詢價(jià)
IDT
22+
32SOJ
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
IDT
21+
32SOJ
13880
公司只售原裝,支持實(shí)單
 詢價(jià)
IDT
23+
32SOJ
9000
原裝正品，支持實(shí)單
 詢價(jià)
IDT
23+
32PIN300MILS
9526
詢價(jià)
IDT
24+
SOJ32
6581
詢價(jià)
CYPRESS
23+
SOJ
9960
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價(jià)
更多IDT71V124SA15TYGI供應(yīng)商 更新時(shí)間2025-1-1 16:30:00

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