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IDT71V124SA20YGI

包裝：管件 封裝/外殼：32-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA20YGI8

包裝：管件 封裝/外殼：32-BSOJ（0.400"，10.16mm 寬） 類別：集成電路（IC） 存儲器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT71V124SA20

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20PH

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20PHI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20TY

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20TYI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20Y

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

IDT71V124SA20YI

3.3VCMOSStaticRAM1Meg(128Kx8-Bit)CenterPower&GroundPinout

Description TheIDT71V124isa1,048,576-bithigh-speedstaticRAMorganizedas128Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionfor

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDT71V124SA20YGI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    管件

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 異步

  • 存儲容量：

    1Mb（128K x 8）

  • 存儲器接口：

    并聯(lián)

  • 寫周期時間 - 字，頁：

    20ns

  • 電壓 - 供電：

    3V ~ 3.6V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    32-BSOJ（0.400"，10.16mm 寬）

  • 供應(yīng)商器件封裝：

    32-SOJ

  • 描述：

    IC SRAM 1MBIT PARALLEL 32SOJ

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
32-SOJ
9550
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
11+
SOJ32
1500
全新原裝
 詢價
IDT, Integrated Device Technol
21+
32-SOJ
56200
一級代理/放心采購
 詢價
IDT
24+
32SOJ
3630
原裝現(xiàn)貨
 詢價
IDT
20+
32-SOP
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IDT
22+
32SOJ
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
32SOJ
13880
公司只售原裝,支持實(shí)單
 詢價
IDT
23+
32SOJ
9000
原裝正品，支持實(shí)單
 詢價
IDT, Integrated Device Techno
23+
32-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IDT, Integrated Device Techno
23+
32-SOJ
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
更多IDT71V124SA20YGI供應(yīng)商 更新時間2024-11-8 16:30:00

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