首頁(yè) >IDT71V2556SA100BGI>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IDT71V2556SA100BGI | 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs | IDT Integrated Device Technology, Inc. | IDT | |
128Kx363.3VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
128Kx363.3VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx363.3VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
128Kx363.3VSynchronousZBT?SRAMs2.5VI/O,BurstCounterPipelinedOutputs Features ◆128Kx36memoryconfigurations ◆Supportshighperformancesystemspeed-166MHz (3.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(READ/WRI | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
3.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
3.3VSynchronousZBTSRAMs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT | ||
128Kx36,256Kx183.3VSynchronousZBTSRAMs2.5VI/O,BurstCounterPipelinedOutputs | IDT Integrated Device Technology, Inc. | IDT |
詳細(xì)參數(shù)
- 型號(hào):
IDT71V2556SA100BGI
- 功能描述:
IC SRAM 4MBIT 100MHZ 119BGA
- RoHS:
否
- 類(lèi)別:
集成電路(IC) >> 存儲(chǔ)器
- 系列:
-
- 標(biāo)準(zhǔn)包裝:
2,000
- 系列:
MoBL® 格式 -
- 存儲(chǔ)器:
RAM
- 存儲(chǔ)器類(lèi)型:
SRAM - 異步
- 存儲(chǔ)容量:
16M(2M x 8,1M x 16)
- 速度:
45ns
- 接口:
并聯(lián)
- 電源電壓:
2.2 V ~ 3.6 V
- 工作溫度:
-40°C ~ 85°C
- 封裝/外殼:
48-VFBGA
- 供應(yīng)商設(shè)備封裝:
48-VFBGA(6x8)
- 包裝:
帶卷(TR)
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
9550 |
專(zhuān)業(yè)分銷(xiāo)產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢(xún)價(jià) | ||
IDT |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣 |
詢(xún)價(jià) | ||
IDT |
24+ |
100-TQFP |
3541 |
原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原廠(chǎng)渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原裝,支持實(shí)單 |
詢(xún)價(jià) | ||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原裝正品,支持實(shí)單 |
詢(xún)價(jià) | ||
IDT |
22+ |
BGA |
3600 |
大量現(xiàn)貨庫(kù)存,提供一站式服務(wù)! |
詢(xún)價(jià) | ||
IDT |
22+ |
BGA |
10000 |
原裝正品優(yōu)勢(shì)現(xiàn)貨供應(yīng) |
詢(xún)價(jià) | ||
IDT |
2023+ |
80000 |
一級(jí)代理/分銷(xiāo)渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品 |
詢(xún)價(jià) | |||
IDT |
2138+ |
BGA |
8960 |
專(zhuān)營(yíng)BGA,QFP原裝現(xiàn)貨,假一賠十 |
詢(xún)價(jià) |
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