首頁(yè)>IDT71V3559S75BQ>規(guī)格書詳情
IDT71V3559S75BQ中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書
| 廠商型號(hào) |
IDT71V3559S75BQ |
| 功能描述 | 128K x 36, 256K x 18, 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter, Flow-Through Outputs |
| 文件大小 |
996.97 Kbytes |
| 頁(yè)面數(shù)量 |
28 頁(yè) |
| 生產(chǎn)廠商 | Integrated Device Technology, Inc. |
| 企業(yè)簡(jiǎn)稱 |
IDT |
| 中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
| 原廠標(biāo)識(shí) |  |
| 數(shù)據(jù)手冊(cè) | |
| 更新時(shí)間 | 2025-1-1 23:00:00 |
相關(guān)芯片規(guī)格書
更多- IDT71V3559S75BG
- IDT71V3559S
- IDT71V3559S75BGI
- IDT71V3558XSA166BQG
- IDT71V3559S75BGGI
- IDT71V3558XSA133BGG
- IDT71V3558XSA166BGG
- IDT71V3558XSA133BQG
- IDT71V3558XSA133PFGI
- IDT71V3558XSA166PFGI
- IDT71V3559S
- IDT71V3558XSA200BQG
- IDT71V3558XSA133BGGI
- IDT71V3558XSA200PFG
- IDT71V3559S75BGG
- IDT71V3558XSA200PFGI
- IDT71V3558XSA100PFGI
- IDT71V3558XSA200BGGI
IDT71V3559S75BQ規(guī)格書詳情
Description
The IDT71V3557/59 are 3.3V high-speed 4,718,592-bit (4.5 Mega-bit) synchronous SRAMs organized as 128K x 36/256K x 18. They are designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus they have been given the name ZBTTM, or Zero Bus Turnaround.
Features
◆ 128K x 36, 256K x 18 memory configurations
◆ Supports high performance system speed - 100 MHz (7.5 ns Clock-to-Data Access)
◆ ZBTTM Feature - No dead cycles between write and read cycles
◆ Internally synchronized output buffer enable eliminates the need to control OE
◆ Single R/W (READ/WRITE) control pin
◆ 4-word burst capability (Interleaved or linear)
◆ Individual byte write (BW1 - BW4) control (May tie active)
◆ Three chip enables for simple depth expansion
◆ 3.3V power supply (±5), 3.3V (±5) I/O Supply (VDDQ)
◆ Optional Boundary Scan JTAG Interface (IEEE 1149.1 complaint)
◆ Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA)
產(chǎn)品屬性
- 型號(hào)：
IDT71V3559S75BQ
- 功能描述：
IC SRAM 4MBIT 75NS 165FBGA
- RoHS：
否
- 類別：
集成電路(IC) >> 存儲(chǔ)器
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
2,000
- 系列：
MoBL® 格式 -
- 存儲(chǔ)器：
RAM
- 存儲(chǔ)器類型：
SRAM - 異步
- 存儲(chǔ)容量：
16M（2M x 8，1M x 16）
- 速度：
45ns
- 接口：
并聯(lián)
- 電源電壓：
2.2 V ~ 3.6 V
- 工作溫度：
-40°C ~ 85°C
- 封裝/外殼：
48-VFBGA
- 供應(yīng)商設(shè)備封裝：
48-VFBGA（6x8）
- 包裝：
帶卷(TR)
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
NA/ |
28 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IDT |
2020+ |
QFP100 |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IDT |
QFP100 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IDT |
23+ |
165-CABGA(13x15) |
71890 |
專業(yè)分銷產(chǎn)品!原裝正品!價(jià)格優(yōu)勢(shì)! |
詢價(jià) | ||
IDT |
24+ |
10 |
現(xiàn)貨 |
詢價(jià) | |||
Renesas Electronics Corporatio |
23+/24+ |
100-LQFP |
8600 |
只供原裝進(jìn)口公司現(xiàn)貨+可訂貨 |
詢價(jià) | ||
IDT |
24+ |
165-FBGA |
5063 |
原裝現(xiàn)貨 |
詢價(jià) | ||
IDT |
23+ |
100TQFP |
9526 |
詢價(jià) | |||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) | ||
IDT, Integrated Device Techno |
23+ |
100-TQFP14x14 |
7300 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價(jià) |
