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IDT71V35761YSA183BQI

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA183BQI

包裝：托盤 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761YSA183BQI8

包裝：托盤 封裝/外殼：165-TBGA 類別：集成電路（IC） 存儲器 描述：IC SRAM 4.5MBIT PAR 165CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V35761YSA183BG

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA183BGI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA183BQ

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA183PF

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

IDT71V35761YSA183PFI

128Kx36,256Kx183.3VSynchronousSRAMs3.3VI/O,PipelinedOutputsBurstCounter,SingleCycleDeselect

Description TheIDT71V35761/781arehigh-speedSRAMsorganizedas128Kx36/256Kx18.TheIDT71V35761/781SRAMscontainwrite,data,addressandcontrolregisters.InternallogicallowstheSRAMtogenerateaself-timedwritebaseduponadecisionwhichcanbeleftuntiltheendofthewritec

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號：

    IDT71V35761YSA183BQI

  • 制造商：

    Renesas Electronics America Inc

  • 類別：

    集成電路（IC） > 存儲器

  • 包裝：

    托盤

  • 存儲器類型：

    易失

  • 存儲器格式：

    SRAM

  • 技術(shù)：

    SRAM - 同步，SDR

  • 存儲容量：

    4.5Mb（128K x 36）

  • 存儲器接口：

    并聯(lián)

  • 電壓 - 供電：

    3.135V ~ 3.465V

  • 工作溫度：

    -40°C ~ 85°C（TA）

  • 安裝類型：

    表面貼裝型

  • 封裝/外殼：

    165-TBGA

  • 供應(yīng)商器件封裝：

    165-CABGA（13x15）

  • 描述：

    IC SRAM 4.5MBIT PAR 165CABGA

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
23+
165-CABGA(13x15)
1389
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IDT, Integrated Device Technol
21+
64-TBGA
5280
進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
 詢價
IDT, Integrated Device Technol
24+
165-CABGA(13x15)
56200
一級代理/放心采購
 詢價
IDT
24+
165-FBGA
5530
原裝現(xiàn)貨
 詢價
IDT
20+
BGA-165
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價
IDT
22+
165CABGA (13x15)
9000
原廠渠道,現(xiàn)貨配單
 詢價
IDT
21+
165CABGA (13x15)
13880
公司只售原裝,支持實(shí)單
 詢價
IDT
23+
165CABGA (13x15)
9000
原裝正品，支持實(shí)單
 詢價
IDT, Integrated Device Techno
23+
165-CABGA13x15
7300
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
更多IDT71V35761YSA183BQI供應(yīng)商 更新時間2025-1-4 16:30:00

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