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IDT71V35761YSA200PF中文資料IDT數(shù)據(jù)手冊PDF規(guī)格書
廠商型號 |
IDT71V35761YSA200PF |
功能描述 | 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect |
文件大小 |
282.83 Kbytes |
頁面數(shù)量 |
22 頁 |
生產(chǎn)廠商 | Integrated Device Technology, Inc. |
企業(yè)簡稱 |
IDT |
中文名稱 | Integrated Device Technology, Inc.官網(wǎng) |
原廠標(biāo)識 | |
數(shù)據(jù)手冊 | |
更新時間 | 2025-1-19 22:30:00 |
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IDT71V35761YSA200PF規(guī)格書詳情
Description
The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.
Features
◆128K x 36, 256K x 18 memory configurations
◆Supports high system speed:
Commercial:
– 200MHz 3.1ns clock access time
Commercial and Industrial:
– 183MHz 3.3ns clock access time
– 166MHz 3.5ns clock access time
◆LBOinput selects interleaved or linear burst mode
◆Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)
◆3.3V core power supply
◆Power down controlled by ZZ input
◆3.3V I/O
◆Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant)
◆Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IDT |
2020+ |
QFP |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價 | ||
IDT |
2016+ |
QFP |
6528 |
只做進(jìn)口原裝現(xiàn)貨!或者訂貨,假一賠十! |
詢價 | ||
IDT |
23+ |
165FPBGA |
9526 |
詢價 | |||
IDT |
24+ |
QFP |
56 |
詢價 | |||
IDT |
22+ |
BGA |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
IDT |
23+ |
NA |
2108 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IDT |
24+ |
QFP |
35200 |
一級代理/放心采購 |
詢價 | ||
IDT |
22+ |
QFP |
10000 |
原裝正品優(yōu)勢現(xiàn)貨供應(yīng) |
詢價 | ||
IDT |
2021+ |
TQFP |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
IDT |
1923+ |
BGAQFP |
488 |
原盒原包裝只有原裝假一罰十價優(yōu)! |
詢價 |