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IDT71V35781YSA200BG中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書

IDT71V35781YSA200BG
廠商型號(hào)

IDT71V35781YSA200BG

功能描述

128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect

文件大小

282.83 Kbytes

頁面數(shù)量

22

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱

IDT

中文名稱

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-6 9:08:00

IDT71V35781YSA200BG規(guī)格書詳情

Description

The IDT71V35761/781 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V35761/781 SRAMs contain write, data, address and control registers. Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle.

Features

◆128K x 36, 256K x 18 memory configurations

◆Supports high system speed:

Commercial:

– 200MHz 3.1ns clock access time

Commercial and Industrial:

– 183MHz 3.3ns clock access time

– 166MHz 3.5ns clock access time

◆LBOinput selects interleaved or linear burst mode

◆Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx)

◆3.3V core power supply

◆Power down controlled by ZZ input

◆3.3V I/O

◆Optional - Boundary Scan JTAG Interface (IEEE 1149.1 compliant)

◆Packaged in a JEDEC Standard 100-pin plastic thin quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
IDT
23+
QFP
4500
全新原裝、誠信經(jīng)營(yíng)、公司現(xiàn)貨銷售
詢價(jià)
IDT
21+
100TQFP
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IDT
23+
100TQFP
9526
詢價(jià)
IDT
2020+
QFP
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
詢價(jià)
IDT
24+
QFP
6980
原裝現(xiàn)貨,可開13%稅票
詢價(jià)
IDT
16+
BGA
2500
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
IDT
24+
BGA
35200
一級(jí)代理/放心采購
詢價(jià)
IDT
23+
BGA
60
原裝正品現(xiàn)貨
詢價(jià)
IDT
2023+
BGA1422
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)