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IDT71V416S10BEI

包裝:托盤 封裝/外殼:48-TFBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4MBIT PARALLEL 48CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

IDT71V416S10BEI8

包裝:托盤 封裝/外殼:48-TFBGA 類別:集成電路(IC) 存儲器 描述:IC SRAM 4MBIT PARALLEL 48CABGA

Renesas Electronics America Inc

Renesas Electronics America Inc

Renesas Electronics America Inc

71V416S10BEG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S10BEGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S10PHG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S10PHGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S10YG

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

71V416S10YGI

3.3VCMOSStaticRAM

IDT

Integrated Device Technology, Inc.

IDT71V416S10BEG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S10BEGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S10PHG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S10PHGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S10YG

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

IDT71V416S10YGI

3.3VCMOSStaticRAM4Meg(256Kx16-Bit)

Description TheIDT71V416isa4,194,304-bithigh-speedStaticRAMorganizedas256Kx16.Itisfabricatedusinghigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhigh-

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IDT71V416S10BEI

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲器

  • 包裝:

    托盤

  • 存儲器類型:

    易失

  • 存儲器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲容量:

    4Mb(256K x 16)

  • 存儲器接口:

    并聯(lián)

  • 寫周期時間 - 字,頁:

    10ns

  • 電壓 - 供電:

    3V ~ 3.6V

  • 工作溫度:

    -40°C ~ 85°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    48-TFBGA

  • 供應(yīng)商器件封裝:

    48-CABGA(9x9)

  • 描述:

    IC SRAM 4MBIT PARALLEL 48CABGA

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
24+
BGA
23000
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
IDT
23+
48-CABGA(9x9)
9000
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
詢價
IDT
2020+
BGA
3196
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
詢價
IDT
1948+
BGA
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
IDT
2020+
BGA
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
IDT, Integrated Device Technol
21+
64-TBGA
5280
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營
詢價
IDT, Integrated Device Technol
24+
48-CABGA(9x9)
56200
一級代理/放心采購
詢價
IDT
23+
FBGA48
1500
原裝正品代理渠道價格優(yōu)勢
詢價
IDT
24+
48-FBGA
7889
原裝現(xiàn)貨
詢價
IDT
21+
BGA
20000
只做正品原裝現(xiàn)貨
詢價
更多IDT71V416S10BEI供應(yīng)商 更新時間2024-12-28 17:06:00