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首頁 >IDT71V424S15PHGI>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IDT71V424S15PHGI	文件：19.28 Kbytes Page：9 Pages	3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S15PHG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S15PHG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S15PHGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S15PHGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S15YG	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S15YG	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
71V424S15YGI	文件：189.42 Kbytes Page：11 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit) Features ◆512Kx8advancedhigh-speedCMOSStaticRAM ◆JEDECCenterPower/GNDpinoutforreducednoise ◆Equalaccessandcycletimes —CommercialandIndustrial:10/12/15ns ◆Single3.3Vpowersupply ◆OneChipSelectplusoneOutputEnablepin ◆Bidirectionaldatainputsandoutputs	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
71V424S15YGI	文件：128.08 Kbytes Page：9 Pages	3.3VCMOSStaticRAM4Meg(512Kx8-Bit)	IDT Integrated Device Technology, Inc.	IDT
71V424S15YGI	文件：72.68 Kbytes Page：9 Pages	3.3VCMOSStaticRAM Description TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-the-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15PH	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15PHG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15PHI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15Y	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15YG	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15YGI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT
IDT71V424S15YI	文件：19.28 Kbytes Page：9 Pages	3.3VCMOSSTATICRAM4MEG(512Kx8-BIT) DESCRIPTION: TheIDT71V424isa4,194,304-bithigh-speedStaticRAMorganizedas512Kx8.ItisfabricatedusingIDT’shigh-perfomance,high-reliabilityCMOStechnology.Thisstate-of-he-arttechnology,combinedwithinnovativecircuitdesigntechniques,providesacost-effectivesolutionforhi	IDT Integrated Device Technology, Inc.	IDT

詳細參數(shù)

型號：
IDT71V424S15PHGI
功能描述：
IC SRAM 4MBIT 15NS 44TSOP
RoHS：
是
類別：
集成電路(IC) >> 存儲器
系列：
-
標準包裝：
2,500
系列：
- 格式 -
存儲器：
EEPROMs - 串行
存儲器類型：
EEPROM
存儲容量：
1K(128 x 8)
速度：
100kHz
接口：
UNI/O?（單線）
電源電壓：
1.8 V ~ 5.5 V
工作溫度：
-40°C ~ 85°C
封裝/外殼：
8-TSSOP，8-MSOP（0.118，3.00mm 寬）
供應商設備封裝：
8-MSOP
包裝：
帶卷(TR)

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市科恒偉業(yè)電子有限公司	IDT71V424S15PHGI	IDT	21+	TSOP	9800	只做原裝正品假一賠十!正規(guī)渠道訂貨!	詢價
深圳市毅創(chuàng)騰電子科技有限公司	IDT71V424S15PHGI	IDT	23+	44-TSOPII	36430	專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!	詢價
深圳市永貝爾科技有限公司	IDT71V424S15PHGI	IDT	23+	NA	19960	只做進口原裝,終端工廠免費送樣	詢價
瀚佳科技(深圳)有限公司	IDT71V424S15PHGI	IDT	24+	TSOP44	36500	原裝現(xiàn)貨/放心購買	詢價
深圳市興燦科技有限公司	IDT71V424S15PHGI	IDT	24+	44-TSOP	5857	原裝現(xiàn)貨	詢價
深圳市萊克訊科技有限公司	IDT71V424S15PHGI	IDT	1922+	TSOP44	8900	公司原裝現(xiàn)貨特價長期供貨歡迎來電咨詢	詢價
深圳市威爾健半導體有限公司	IDT71V424S15PHGI	IDT	23+	SSOP	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市河鋒鑫科技有限公司	IDT71V424S15PHGI	IDT	22+	44TSOP II	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳廊盛科技有限公司	IDT71V424S15PHGI	IDT	2022	SSOP	80000	原裝現(xiàn)貨,OEM渠道,歡迎咨詢	詢價
深圳市芯福林電子科技有限公司	IDT71V424S15PHGI	IDT	21+	44TSOP II	13880	公司只售原裝,支持實單	詢價

更多IDT71V424S15PHGI供應商更新時間2024-12-31 17:29:00

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